Publications & Presentations

Compact solid-state laser to generate 5 mJ at 532 nm

Bhabana Pati, James Burgess, Michael Rayno and Kenneth Stebbins
SPIE Photonics West 2019 LASE, SPIE Paper No. 10896-14, 2-7 February, 2019, San Francisco, CA

A compact and simple laser has been developed to generate 5 mJ of energy and

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A compact and simple laser has been developed to generate 5 mJ of energy and

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Copyright © 2019 Society of Photo-Optical Instrumentation Engineers. Presented at SPIE Photonics West 2019 LASE, SPIE Paper No. 10896-14, 2-7 February, 2019. This paper is made available as an electronic reprint (preprint) with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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Compact solid-state laser to generate 5 mJ at 532 nm

Bhabana Pati, James Burgess, Michael Rayno and Kenneth Stebbins
SPIE Photonics West 2019 LASE, SPIE Paper No. 10896-14, 2-7 February, 2019, San Francisco, CA

A compact and simple laser has been developed to generate 5 mJ of energy and

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A compact solid state laser

Bhabana Pati, Eric D. Park, and Kenneth Stebbins
SPIE Photonics West, 13-18 February 2016, San Francisco, CA

A compact laser producing a green wavelength with a volume of 8 cm3 and a weight of 80 g finds application in many fields from military to space based. Q-Peak has designed and built a small solid-state laser that produces 1 mJ of energy per-pulse at a 1 - 20 Hz repetition rate. The laser is passively Q-switched using a Cr4+:YAG saturable absorber to generate pulses 10 ns.

A KTP nonlinear crystal doubles the frequency to generate light at 523 nm. The laser is sidepumped by a single bar diode laser using a unique pump cavity to homogenize the pump intensity in the laser rod. The non-linear components can easily be modified to change the output wavelength from UV to mid IR.

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Copyright © 2016 Society of Photo-Optical Instrumentation Engineers. Presented at SPIE Photonics West, SPIE Paper No. 9726-27, 13-18 February, 2016 . This paper is made available as an electronic reprint (preprint) with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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Calorimetric measurement of absorption loss in orientation-patterned GaP and GaAs

Yelena Isyanova, Peter F. Moulton, and Peter G. Schunemann
SPIE Photonics West 2015, 7-12 February 2015, Moscone Center, San Francisco

Materials grown by vapor phase techniques such as chemical vapor deposition or hydride vapor phase epitaxy (HVPE) often exhibit very low losses which are difficult to quantify by simple transmission measurements.

The measurement of extremely low absorption coefficients can be carried out by laser calorimetric or thermal rise techniques, which determine the absorption coefficients by measuring the temperature increase caused by the absorbed laser radiation. We report here on results of measuring absorption coefficients of bulk HVPE-grown orientation-patterned GaAs (OP-GaAs) and GaP (OP-GaP) crystals using one of the methods of laser calorimetry, called transient calorimetry. In our setup, the sample under test is attached to a high-conductivity copper holder and placed in a vacuum chamber. A 2-micron CW laser beam is transmitted through the sample and the temperature rise in the sample is measured and, through the calorimeter calibration process, related to the power absorbed in the sample.

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Copyright © 2015 Society of Photo-Optical Instrumentation Engineers. Proc. SPIE 9347, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XIV, 93471B (March 24, 2015); doi:10.1117/12.2081225. This paper is made available as an electronic reprint (preprint) with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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High Power WDM with Narrow Wavelength Separations

Bhabana Pati, Wenyen Tian, Amy Van Newkirk, and Axel Schülzgen
CLEO 2015, 10-15 May 2015, San Jose, CA

We designed and manufactured a high power WDM to enable a high power Raman la-sers. We used a custom designed glass processing machine to fuse the WDM. We tested the WDM at 100 W of power with 0.05 dB loss.

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Acknowledgements Authors are thankful to Dr. Robert Stegeman for his insight and helpful discussion on this project. This work was supported by an Air Force Office of Scientific Research, Phase I STTR (Contract # FA9550-14-C-0012).

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Compact, Passively Q-Switched 523-nm Laser

Bhabana Pati, Eric D. Park, and Ken Stebbins
CLEO 2015, 10-15 May 2015, San Jose, CA

We have developed a compact, passively Q-switched, intra-cavity frequency doubled Nd:YLF laser that produces 1-mJ of energy in a 10-ns pulse at a 1-20 Hz repetition rate.

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Acknowledgements This work was supported by a NASA Phase II SBIR (Contract # NNX12CA41C).

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